PESD3V3C1BSF_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

PESD3V3C1BSF
Ultra low capacitance bidirectional ESD protection diode
26 June 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode,
part of the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962)
leadless ultra small Surface-Mounted Device (SMD) package. The TrEOS Protection
family is optimized for safeguarding very sensitive high-speed interfaces against ESD
pulses with a high level of robustness.
2. Features and benefits
• Bidirectional ESD protection of one line
• Extremely low diode capacitance C_d = 0.2 pF
• ESD protection up to ±20 kV according to IEC 61000-4-2
• Ultra small SMD package
3. Applications
ESD and surge protection for:
• ultra high-speed datalines
• very sensitive interface lines
• generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1.
Symbol
V_RWM
C_d
Quick reference data
Parameter
reverse standoff
voltage
diode capacitance
Conditions
T_amb = 25 °C
f = 1 MHz; V_R = 0 V; T_amb = 25 °C
Min Typ Max Unit
-
-
3.3 V
-
0.2 0.25 pF
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