PESD36VS2UT Datasheet, PDF(1/12 Page) NXP Semiconductors – Low capacitance unidirectional double ESD protection diode

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PESD36VS2UT Datasheet, PDF (1/12 Pages) NXP Semiconductors – Low capacitance unidirectional double ESD protection diode

PESD36VS2UT

Low capacitance unidirectional double ESD protection diode

Rev. 01 â 16 July 2009

Product data sheet

1. Product proï¬le

1.1 General description

Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in

a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to

protect up to two signal lines from the damage caused by ESD and other transients.

1.2 Features

I Unidirectional ESD protection of

two lines

I Low diode capacitance: Cd = 17 pF

I Max. peak pulse power: PPP = 160 W

I Low clamping voltage: VCL = 55 V

I Ultra low leakage current: IRM â¤ 1 ÂµA

I ESD protection up to 30 kV

I IEC 61000-4-2; level 4 (ESD)

I IEC 61000-4-5 (surge); IPP = 2.5 A

I AEC-Q101 qualiï¬ed

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I Subscriber Identity Module (SIM) card

protection

I Portable electronics

I Communication systems

I 10/100 Mbit/s Ethernet

1.4 Quick reference data

Table 1. Quick reference data

Tamb = 25 Â°C unless otherwise speciï¬ed.

Symbol Parameter

Conditions

Per diode

VRWM

reverse standoff voltage

diode capacitance

f = 1 MHz; VR = 0 V

Min Typ Max Unit

▷