PESD24VF1BL_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

PESD24VF1BL
Ultra low capacitance bidirectional ESD protection diode
14 February 2014
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
DFN1006-2 (SOD882) ultra small and leadless Surface-Mounted Device (SMD) plastic
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
• Ultra low diode capacitance C_d = 0.30 pF
• High reverse standoff voltage V_RWM = 24 V
• Ultra low leakage current: I_RM = 1 nA
• ESD protection up to 10 kV; IEC 61000-4-2
• AEC-Q101 qualified
3. Applications
• NFC antenna protection
• Protection of high-speed data lines
4. Quick reference data
Table 1.
Symbol
C_d
V_RWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; V_R = 0 V
[1] Measured from pin 1 to pin 2.
Min Typ Max Unit
[1]
0.23 0.3 0.45 pF
-
-
24
V
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