PESD1LIN Datasheet, PDF (1/12 Pages) NXP Semiconductors – LIN bus ESD protection diode in SOD323

PESD1LIN
LIN bus ESD protection diode in SOD323
Rev. 01 — 26 October 2004
Product data sheet
1. Product profile
1.1 General description
PESD1LIN in very small SOD323 (SC-76) SMD plastic package designed to protect one
automotive LIN bus line from the damage caused by ElectroStatic Discharge (ESD) and
other transients.
1.2 Features
s ESD protection of one automotive LIN bus line
s Asymmetrical diode configuration ensures an optimized Electromagnetical Immunity of
a LIN Electronic Control Unit (ECU)
s Due to the integrated diode structure only one very small SOD323 package is needed
s Max. peak pulse power: P_PP = 160 W at t_p = 8/20 µs
s Low clamping voltage: V_(CL)R = 40 V at I_PP = 1 A
s Ultra low leakage current: I_RM < 1 nA
s ESD protection of up to 23 kV
s IEC 61000-4-2, level 4 (ESD)
s IEC 61000-4-5 (surge); I_PP = 3 A at t_p = 8/20 µs
1.3 Applications
s LIN bus protection
s Automotive applications
1.4 Quick reference data
Table 1:
Symbol
V_RWM
C_d
Quick reference data
Parameter
reverse stand-off voltage
PESD1LIN (15 V)
PESD1LIN (24 V)
diode capacitance
Conditions
V_R = 0 V;
f = 1 MHz
Min Typ Max Unit
-
-
15
V
-
-
24
V
-
13
17
pF