PESD18VF1BSF_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

PESD18VF1BSF
Ultra low capacitance bidirectional ESD protection diode
20 May 2015
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode
in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD)
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
• Bidirectional ESD protection of one line
• Ultra low diode capacitance C_d = 0.28 pF
• High reverse standoff voltage V_RWM = 18 V
• ESD protection up to ±10 kV according to IEC 61000-4-2
3. Applications
• NFC antenna protection
• Protection of high-speed and standard data lines with high signal levels
4. Quick reference data
Table 1.
Symbol
C_d
V_RWM
Quick reference data
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
0.28 0.45 pF
-
-
18
V
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
Simplified outline
Graphic symbol
1
2
Transparent
top view
DSN0603-2 (SOD962-2)
1
2
sym045
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