PESD12VS1ULD_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – Unidirectional ESD protection diode

PESD12VS1ULD
Unidirectional ESD protection diode
Rev. 1 — 11 May 2011
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one
signal line from the damage caused by ESD and other transients. The device is housed in
a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with
visible and solderable side pads.
1.2 Features and benefits
„ ESD protection of one line
„ Ultra small SMD plastic package
„ Solderable side pads
„ Package height typ. 0.37 mm
„ Low clamping voltage: V_CL = 19 V
„ AEC-Q101 qualified
„ ESD protection up to 30 kV
„ IEC 61000-4-2; level 4 (ESD)
„ IEC 61000-4-5 (surge); I_PP = 5 A
„ Max. peak pulse power: P_PP = 150 W
„ Ultra low leakage current: I_RM < 1 nA
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Communication systems
„ Portable electronics
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_RWM
reverse standoff voltage
C_d
diode capacitance
f = 1 MHz; V_R = 0 V
Min Typ Max Unit
-
-
12
V
-
38
75
pF