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PEMH30_PUMH30_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN/NPN double resistor-equipped transistors R1 = 2.2 kW, R2 = open
PEMH30; PUMH30
NPN/NPN double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 01 — 28 March 2006
Product data sheet
1. Product profile
1.1 General description
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number
Package
Philips
PEMH30
SOT666
PUMH30
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD30
PUMD30
PNP/PNP
complement
PEMB30
PUMB30
1.2 Features
I 100 mA output current capability
I Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place costs
1.3 Applications
I Low current peripheral driver
I Control of IC inputs
I Cost-saving alternative for BC847BS
and BC847BV
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min Typ Max Unit
-
-
-
-
1.54 2.2
50
V
100 mA
2.86 kΩ