PEMD18_PUMD18_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors R1 = 4.7 k, R2 = 10 k

PEMD18; PUMD18
NPN/PNP resistor-equipped transistors;
R1 = 4.7 k, R2 = 10 k
Rev. 2 — 21 December 2011
Product data sheet
1. Product profile
1.1 General description
NPN/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.
Table 1. Product overview
Type number Package
NXP
JEITA
PEMD18
SOT666 -
PUMD18
SOT363 SC-88
PNP/PNP
complement
PEMB18
PUMB18
NPN/NPN
complement
PEMH18
PUMH18
Package
configuration
ultra small and flat
lead
very small
1.2 Features and benefits
 100 mA output current capability
 Built-in bias resistors
 Simplifies circuit design
 Reduces component count
 Reduces pick and place costs
 AEC-Q101 qualified
1.3 Applications
 Low current peripheral driver
 Control of IC inputs
 Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ
Per transistor; for the PNP transistor (TR2) with negative polarity
V_CEO
I_O
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
-
-
-
-
3.3
4.7
R2/R1
bias resistor ratio
1.7
2.1
Max Unit
50
V
100 mA
6.1
k
2.6