PEMD10_PUMD10_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

PEMD10; PUMD10
NPN/PNP resistor-equipped transistors;
R1 = 2.2 k, R2 = 47 k
Rev. 6 — 4 January 2012
Product data sheet
1. Product profile
1.1 General description
NPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic
packages.
Table 1. Product overview
Type number Package
NXP
JEITA
PEMD10
SOT666 -
PUMD10
SOT363 SC-88
PNP/PNP
NPN/NPN
Package
complement complement configuration
PEMB10
PUMB10
PEMH10
PUMH10
ultra small and flat lead
very small
1.2 Features and benefits
 100 mA output current capability
 Built-in bias resistors
 Simplifies circuit design
 Reduces component count
 Reduces pick and place costs
 AEC-Q101 qualified
1.3 Applications
 Low current peripheral driver
 Control of IC inputs
 Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor; for the PNP transistor (TR2) with negative polarity
V_CEO
I_O
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
-
-
50
V
-
-
100 mA
1.54 2.20 2.86 k
R2/R1
bias resistor ratio
17
21
26