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PDTD123Y_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kΩ, R2 = 10 kΩ | |||
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PDTD123Y series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 02 â 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTD123YK
SOT346
PDTD123YS[1] SOT54
PDTD123YT
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTB123YK
PDTB123YS
PDTB123YT
1.2 Features
 Built-in bias resistors
 Simplifies circuit design
 500 mA output current capability
 Reduces component count
 Reduces pick and place costs
 ±10 % resistor ratio tolerance
1.3 Applications
 Digital application in automotive and
industrial segment
 Controlling IC inputs
 Cost saving alternative for BC817 series
in digital applications
 Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
-
-
50
V
-
-
500 mA
1.54 2.2
2.86 kΩ
4.1 4.55 5
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