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PDTD123T_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kΩ, R2 = open | |||
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PDTD123T series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 03 â 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTD123TK
SOT346
PDTD123TS[1] SOT54
PDTD123TT
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTB123TK
PDTB123TS
PDTB123TT
1.2 Features
 Built-in bias resistors
 Simplifies circuit design
 500 mA output current capability
 Reduces component count
 Reduces pick and place costs
1.3 Applications
 Digital application in automotive and
industrial segments
 Controlling IC inputs
 Cost saving alternative for BC817 series
in digital applications
 Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min Typ
-
-
-
-
1.54 2.2
Max Unit
50
V
500 mA
2.86 kΩ
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