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PDTD113E_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ | |||
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PDTD113E series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 â 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTD113EK
SOT346
PDTD113ES[1] SOT54
PDTD113ET
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTB113EK
PDTB113ES
PDTB113ET
1.2 Features
 Built-in bias resistors
 Simplifies circuit design
 500 mA output current capability
 Reduces component count
 Reduces pick and place costs
 ±10 % resistor ratio tolerance
1.3 Applications
 Digital application in automotive and
industrial segments
 Controlling IC inputs
 Cost saving alternative for BC817 series
in digital applications
 Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
-
-
50
V
-
-
500 mA
0.7
1
1.3 kΩ
0.9
1.0
1.1
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