PBYR745X Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes schottky barrier

Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR745X series
GENERAL DESCRIPTION
Low leakage, platinum barrier,
schottky rectifier diodes in a full pack
plastic envelope featuring low
forward voltage drop, absence of
stored charge. and guaranteed
reverse surge capability. The devices
are intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and zero switching losses
are important.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_RRM
V_F
I_F(AV)
PBYR7-
Repetitive peak reverse
voltage
Forward voltage
Average forward current
MAX.
35X
35
0.57
7.5
MAX.
40X
40
0.57
7.5
MAX.
45X
45
0.57
7.5
UNIT
V
V
A
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1 cathode
2 anode
case isolated
k
a
1
2
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_F(AV)
I_F(RMS)
I_FRM
I_FSM
I²t
I_RRM
I_RSM
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
T_hs ≤ 128 ˚C
-
Average forward current
square wave; δ = 0.5;
-
T_hs ≤ 123 ˚C
RMS output current
-
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
T_hs ≤ 123 ˚C
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal T_j = 125 ˚C prior
to surge; with reapplied
I²t for fusing
V_RRM(max)
t = 10 ms
-
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
Non-repetitive peak reverse t_p = 100 µs
-
current
Storage temperature
-65
Operating junction temperature
-
MAX.
-35 -40 -45
35 40 45
35 40 45
35 40 45
7.5
10.6
15
100
110
50
1
1
175
150
UNIT
V
V
V
A
A
A
A
A
A²s
A
A
˚C
˚C
August 1996
1
Rev 1.000