PBYR745B Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR745B, PBYR745D series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
tab
QUICK REFERENCE DATA
V_R = 40 V/ 45 V
a
3
I_F(AV) = 7.5 A
V_F ≤ 0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage,
high frequency switched mode power supplies.
The PBYR745B series is supplied in the SOT404 surface mounting package.
The PBYR745D series is supplied in the SOT428 surface mounting package.
PINNING
SOT404
SOT428
PIN
DESCRIPTION
tab
tab
1 no connection
2 cathode¹
3 anode
2
2
tab cathode
13
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
T_mb ≤ 114 ˚C
PBYR7
PBYR7
-
-
-
I_F(AV)
Average rectified forward square wave; δ = 0.5; T_mb ≤ 136 ˚C -
current
I_FRM
Repetitive peak forward
square wave; δ = 0.5; T_mb ≤ 136 ˚C -
current
I_FSM
Non-repetitive peak forward t = 10 ms
current
t = 8.3 ms
PBYR7..B -
-
t = 10 ms
PBYR7..D -
t = 8.3 ms
-
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
I_RRM
Peak repetitive reverse
pulse width and repetition rate
-
surge current
limited by T_{j max}
T_j
Operating junction
-
temperature
T_stg
Storage temperature
- 65
1. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package.
MAX.
40B
45B
40D
45D
40
45
40
45
40
45
7.5
15
135
150
100
110
1
150
175
UNIT
V
V
V
A
A
A
A
A
A
A
˚C
˚C
July 1998
1
Rev 1.200