PBYR7025WT Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR7025WT series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 20 V / 25 V
I_O(AV) = 70 A
V_F ≤ 0.46 V
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR7025WT series is
supplied in the conventional leaded
SOT429 (TO247) package.
PINNING
PIN
DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
I_RSM
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
T_mb ≤ 116 ˚C
-
Average output current (both square wave; δ = 0.5;
-
diodes conducting)
T_mb ≤ 114 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 114 ˚C
Non-repetitive peak forward t = 10 ms
-
current, per diode
t = 8.3 ms
-
sinusoidal T_j = 125 ˚C prior
to surge; with reapplied
V_RRM(max)
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse t_p = 100 µs
-
current per diode
Storage temperature
-65
Operating junction temperature
-
MAX.
-20
-25
20
25
20
25
20
25
70
70
500
550
2
2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
45
MAX.
0.9
0.65
-
UNIT
K/W
K/W
K/W
December 1998
1
Rev 1.000