PBYR645CTD Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR645CTD series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 40 V/ 45 V
I_O(AV) = 6 A
V_F ≤ 0.6 V
GENERAL DESCRIPTION
Dual schottky rectifier diodes
intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
The PBYR645CTD series is
supplied in the SOT428 surface
mounting package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode¹
3 anode 2
tab cathode
SOT428
tab
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse volt-
age
Working peak reverse volt-
age
Continuous reverse voltage
T_mb ≤ 113 ˚C
PBYR6
-
-
-
Average rectified output cur- square wave; δ = 0.5;
-
rent (both diodes conducting) T_mb ≤ 134 ˚C
Repetitive peak forward cur- square wave; δ = 0.5;
-
rent per diode
T_mb ≤ 134 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
Peak repetitive reverse
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
pulse width and repetition rate -
surge current per diode
limited by T_{j max}
Operating junction tempera-
-
ture
Storage temperature
- 65
MAX.
40CTD
40
45CTD
45
40
45
40
45
6
6
65
70
UNIT
V
V
V
A
A
A
A
1
A
150
˚C
175
˚C
1 it is not possible to make connection to pin 2 of the SOT428 package
September 1998
1
Rev 1.100