PBYR645CT Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR645CT series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 35 V/ 40 V/ 45 V
I_O(AV) = 10 A
V_F ≤ 0.6V
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR645CT series is supplied
in the conventional leaded SOT82
package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab cathode
SOT82
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
PBYR6
T_mb ≤ 100 ˚C
square wave; δ = 0.5; T_mb ≤ 119 ˚C
square wave; δ = 0.5; T_mb ≤ 119 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
pulse width and repetition rate
limited by T_{j max}
MIN.
-
-
-
-
-
-
-
-
-
- 65
MAX.
35CT 40CT
35 40
35 40
35 40
10
10
75
82
1
150
150
45CT
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
100
MAX. UNIT
5 K/W
4 K/W
- K/W
May 1998
1
Rev 1.200