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PBYR4045WT Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier | |||
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR4045WT series
FEATURES
SYMBOL
⢠Low forward volt drop
⢠Fast switching
⢠Reverse surge capability
⢠High thermal cycling performance
⢠Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
VR = 40 V/ 45 V
IF(AV) = 40 A
VF ⤠0.58 V
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR4045WT series is
supplied in the conventional leaded
SOT429 (TO247) package.
PINNING
PIN
DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
PBYR40
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
-
voltage
Working peak reverse
-
voltage
Continuous reverse voltage Tmb ⤠107 ËC
-
Average output current (both square wave; δ = 0.5; Tmb ⤠120 ËC -
diodes conducting)
Repetitive peak forward
current
square wave; δ = 0.5; Tmb ⤠120 ËC -
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; Tj = 125 ËC prior to
surge; with reapplied VRRM(max)
Peak repetitive reverse
pulse width and repetition rate
-
surge current
limited by Tj max
Operating junction
-
temperature
Storage temperature
- 65
MAX.
40WT 45WT
40
45
40
45
40
45
40
40
300
325
2
150
150
UNIT
V
V
V
A
A
A
A
A
ËC
ËC
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
45
MAX. UNIT
1.4 K/W
1 K/W
- K/W
December 1998
1
Rev 1.000
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