PBYR3045WT Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR3045WT series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 40 V/ 45 V
I_O(AV) = 30 A
I_FSM = 300 A
V_F ≤ 0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR3045WT series is
supplied in the conventional leaded
SOT429 (TO247) package.
PINNING
PIN
DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
PBYR30
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
-
voltage
Working peak reverse
-
voltage
Continuous reverse voltage T_mb ≤ 107 ˚C
-
Average rectified output
current (both diodes
square wave; δ = 0.5; T_mb ≤ 124 ˚C -
conducting)
Repetitive peak forward
current per diode
square wave; δ = 0.5; T_mb ≤ 124 ˚C -
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
Peak repetitive reverse
pulse width and repetition rate
-
surge current per diode
limited by T_{j max}
Operating junction
-
temperature
Storage temperature
- 65
MAX.
40WT 45WT
40
45
40
45
40
45
30
30
300
330
2
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
45
MAX. UNIT
1.6 K/W
1.2 K/W
- K/W
July 1998
1
Rev 1.200