PBYR3045PTF Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes schottky barrier

Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR3045PTF series
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky barrier rectifier diodes in a
full pack, plastic envelope featuring
low forward voltage drop and
absence of stored charge. These
devices can withstand reverse
voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
QUICK REFERENCE DATA
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
V_RRM
V_F
I_O(AV)
PBYR30- 35PTF 40PTF 45PTF
Repetitive peak reverse 35
40
45
V
voltage
Forward voltage
0.65 0.65 0.65 V
Output current (both
20
20
20
A
diodes conducting)
PINNING - SOT199
PIN
DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
PIN CONFIGURATION
case
1 23
SYMBOL
a1
a2
1
3
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_O(RMS)
I_FRM
I_FSM
I²t
I_RRM
I_RSM
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
T_hs ≤ 113 ˚C
-
Output current (both diodes
square wave; δ = 0.5;
-
conducting)
T_hs ≤ 109 ˚C
RMS forward current
-
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_hs ≤ 109 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode.
t = 8.3 ms
-
sinusoidal; T_j = 125 ˚C prior
to surge; with reapplied
I²t for fusing
V_RWM(max)
t = 10 ms
-
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode.
Non-repetitive peak reverse t_p = 100 µs
-
current per diode.
Storage temperature
-65
Operating junction temperature
-
MAX.
-35 -40 -45
35 40 45
35 40 45
35 40 45
20
20
30
135
150
91
2
2
175
150
UNIT
V
V
V
A
A
A
A
A
A²s
A
A
˚C
˚C
August 1996
1
Rev 1.100