PBYR30100WT Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR30100WT series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 60 V/ 80 V/ 100 V
I_O(AV) = 30 A
V_F ≤ 0.7 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR30100WT series is
supplied in the conventional leaded
SOT429 (TO247) package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
mounting cathode
base
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
T_mb ≤ 139 ˚C
PBYR30
-
-
-
Average rectified output
square wave; δ = 0.5;
-
current (both diodes
conducting)
T_mb ≤ 124 ˚C
Repetitive peak forward
square wave; δ = 0.5;
-
current per diode
T_mb ≤ 124 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
Peak repetitive reverse
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
pulse width and repetition rate -
surge current per diode
limited by T_{j max}
Operating junction
-
temperature
Storage temperature
- 65
60WT
60
60
60
MAX.
80WT
80
80
80
30
30
180
200
1
150
175
100WT
100
100
100
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
in free air
MIN.
-
-
-
TYP.
-
-
45
MAX. UNIT
1.4 K/W
1 K/W
- K/W
November 1998
1
Rev 1.300