PBYR2545CT Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR2545CT, PBYR2545CTB series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 40 V/ 45 V
I_O(AV) = 30 A
V_F ≤ 0.62 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2545CT series is supplied in the SOT78 conventional leaded package.
The PBYR2545CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
tab
tab
1 anode 1 (a)
2 cathode (k) ¹
3 anode 2 (a)
2
tab cathode (k)
1 23
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V_RRM
V_RWM
V_R
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
T_mb ≤ 113 ˚C
PBYR25
40CT
45CT
PBYR25
40CTB 45CTB
-
40
45
V
-
40
45
V
-
40
45
V
I_O(AV)
Average rectified forward square wave; δ = 0.5;
-
30
A
current (both diodes
conducting)²
T_mb ≤ 126 ˚C
I_FRM
Repetitive peak forward
square wave; δ = 0.5;
current per diode
T_mb ≤ 126 ˚C
I_FSM
Non-repetitive peak forward t = 10 ms
current per diode
t = 8.3 ms
-
30
A
-
180
A
-
200
A
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
I_RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T_{j max}
T_j
Operating junction
-
150
˚C
temperature
T_stg
Storage temperature
- 65
175
˚C
1. It is not possible to make connection to pin 2 of the SOT404 package.
2. SOT78 package. For output currents greater than 20A the cathode connection should be made to the metal
mounting tab.
October 1998
1
Rev 1.400