PBYR2525CT Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes schottky barrier

Philips Semiconductors
Rectifier diodes
schottky barrier
Product specification
PBYR2525CT series
GENERAL DESCRIPTION
Dual nickel silicide schottky barrier
rectifier diodes in a plastic envelope
featuring low forward voltage drop
and absence of stored charge. These
devices can withstand reverse
voltage transients and have
guaranteed reverse surge capability.
The devices are intended for use in
switched mode power supplies with
3 V - 3.3 V outputs, or as or-ing
diodes in fault tolerant power supply
systems.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_RRM
V_F
I_O(AV)
PBYR25-
Repetitive peak reverse
voltage
Forward voltage
Average output current (both
diodes conducting)
MAX.
20CT
20
0.41
30
MAX.
25CT
25
0.41
30
UNIT
V
V
A
PINNING - TO220AB
PIN
DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode (k)
PIN CONFIGURATION
tab
1 23
SYMBOL
a1
a2
1
3
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_O(RMS)
I_FRM
I_FSM
I²t
I_RRM
I_RSM
T_stg
T_j
Repetitive peak reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
T_mb ≤ 109 ˚C
-
Average output current (both square wave; δ = 0.5;
-
diodes conducting)
T_mb ≤ 135 ˚C
RMS output current (both
-
diodes conducting)
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
T_mb ≤ 135 ˚C
Non-repetitive peak forward t = 10 ms
-
current, per diode
t = 8.3 ms
-
sinusoidal T_j = 125 ˚C prior
to surge; with reapplied
I²t for fusing
V_RRM(max)
t = 10 ms
-
Repetitive peak reverse current t_p = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse t_p = 100 µs
-
current per diode
Storage temperature
-65
Operating junction temperature
-
MAX.
-20
-25
20
25
20
25
20
25
30
43
30
180
200
162
2
2
175
150
UNIT
V
V
V
A
A
A
A
A
A²s
A
A
˚C
˚C
January 1997
1
Rev 1.000