PBYR235CT Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR245CT series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• low profile surface mounting
package
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 40 V/ 45 V
I_O(AV) = 2 A
V_F ≤ 0.45V
GENERAL DESCRIPTION
Dual, common cathode schottky
rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR245CT series is supplied
in the surface mounting SOT223
package.
PINNING
PIN
DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab cathode
SOT223
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
T_sp ≤ 74 ˚C
PBYR2
-
-
-
Average rectified output
current (both diodes
square wave; δ = 0.5; T_sp ≤ 119 ˚C -
conducting)
Repetitive peak forward
current per diode
square wave; δ = 0.5; T_sp ≤ 119 ˚C -
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
Peak repetitive reverse
pulse width and repetition rate
-
surge current per diode
limited by T_{j max}
Operating junction
-
temperature
Storage temperature
- 40
MAX.
40CT
40
45CT
45
40
45
40
45
2
2
6
6.6
1
150
150
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-a}
Thermal resistance junction
to ambient
CONDITIONS
pcb mounted, minimum footprint
pcb mounted, pad area as in fig:1
MIN. TYP. MAX. UNIT
- 156 - K/W
- 70 - K/W
July 1998
1
Rev 1.400