PBYR2045CTF Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR2045CTF, PBYR2045CTX series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
a1
a2
1
3
k2
QUICK REFERENCE DATA
V_R = 40 V/ 45 V
I_O(AV) = 20 A
V_F ≤ 0.57V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2045CTF series is supplied in the SOT186 package.
The PBYR2045CTX series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
case
case
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
PBYR20
PBYR20
-
-
T_hs ≤ 84 ˚C
-
square wave; δ = 0.5;
-
T_hs ≤ 78 ˚C
square wave; δ = 0.5;
-
T_hs ≤ 78 ˚C
t = 10 ms
-
t = 8.3 ms
-
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
pulse width and repetition rate -
limited by T_{j max}
-
- 65
MAX.
40CTF
40CTX
40
45CTF
45CTX
45
40
45
40
45
20
UNIT
V
V
V
A
20
A
100
A
110
A
1
A
150
˚C
175
˚C
October 1998
1
Rev 1.300