PBYR1645F Datasheet, PDF (1/6 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1645F, PBYR1645X
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
k
1
QUICK REFERENCE DATA
V_R = 40 V/ 45 V
a
2
I_F(AV) = 16 A
V_F ≤ 0.6 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR1645F is supplied in the SOD100 package.
The PBYR1645X is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
case
1 cathode
case
2 anode
tab isolated
12
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
T_hs ≤ 97 ˚C
PBYR16
PBYR16
-
-
-
Average rectified forward square wave; δ = 0.5; T_hs ≤ 95 ˚C
-
current
Repetitive peak forward
current
square wave; δ = 0.5; T_hs ≤ 95 ˚C
-
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
Peak repetitive reverse
pulse width and repetition rate
-
surge current
limited by T_{j max}
Operating junction
-
temperature
Storage temperature
- 65
MAX.
40F
45F
40X
45X
40
45
40
45
40
45
16
32
120
132
1
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
July 1998
1
Rev 1.200