PBYR1645 Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1645 series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
1
QUICK REFERENCE DATA
V_R = 40 V/ 45 V
a
2
I_F(AV) = 16 A
V_F ≤ 0.57 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR1645 series is supplied
in the conventional leaded SOD59
(TO220AC) package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab cathode
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
PBYR16
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
-
voltage
Working peak reverse
-
voltage
Continuous reverse voltage T_mb ≤ 116 ˚C
-
Average rectified forward
current
square wave; δ = 0.5; T_mb ≤ 131 ˚C -
Repetitive peak forward
current
square wave; δ = 0.5; T_mb ≤ 131 ˚C -
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
Peak repetitive reverse
pulse width and repetition rate
-
surge current
limited by T_{j max}
Operating junction
-
temperature
Storage temperature
- 65
MAX.
40
45
40
45
40
45
40
45
16
32
135
150
1
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
in free air
MIN. TYP. MAX. UNIT
-
- 1.5 K/W
- 60 - K/W
July 1998
1
Rev 1.200