PBYR1025D Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR1025D series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
tab
QUICK REFERENCE DATA
V_R = 20 V/ 25 V
a
3
I_F(AV) = 10 A
V_F ≤ 0.41 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a
surface mounting plastic envelope.
Intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
The PBYR1025D series is supplied
in the SOT428 surface mounting
package.
PINNING
PIN
DESCRIPTION
1 no connection
2 cathode¹
3 anode
tab cathode
SOT428
tab
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
T_mb ≤ 120 ˚C
PBYR10
-
-
-
Average rectified forward
current
square wave; δ = 0.5; T_mb ≤ 140 ˚C -
Repetitive peak forward
current
square wave; δ = 0.5; T_mb ≤ 140 ˚C -
Non-repetitive peak forward t = 10 ms
-
current
t = 8.3 ms
-
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
Peak repetitive reverse
pulse width and repetition rate
-
surge current
limited by T_{j max}
Operating junction
-
temperature
Storage temperature
- 65
MAX.
20D
25D
20
25
20
25
20
25
10
20
100
110
1
150
175
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
1 It is not possible to make connection to pin 2 of the SOT428 package.
April 1998
1
Rev 1.000