PBYR10100X Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR10100X series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
SYMBOL
k
1
QUICK REFERENCE DATA
V_R = 100 V
a
2
I_F(AV) = 10 A
V_F ≤ 0.74 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic
envelope with electrically isolated
mounting tab. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR10100 series is supplied
in the conventional leaded SOD113
package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
case isolated
SOD113 (SOT186A)
case
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
T_hs ≤ 115 ˚C
square wave; δ = 0.5; T_hs ≤ 114 ˚C
square wave; δ = 0.5; T_hs ≤ 114 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
pulse width and repetition rate
limited by T_{j max}
MIN.
-
-
-
-
-
-
-
-
-
- 65
MAX.
100
100
100
10
20
135
150
1
150
150
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal
both terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
C_isol
Capacitance from both terminals f = 1 MHz
to external heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
November 1999
1
Rev 1.000