PBYR10100 Datasheet, PDF (1/5 Pages) NXP Semiconductors – Rectifier diodes Schottky barrier

Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR10100 series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
k
1
QUICK REFERENCE DATA
V_R = 60 V/ 80 V/ 100 V
a
2
I_F(AV) = 10 A
V_F ≤ 0.7 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
The PBYR10100 series is supplied
in the conventional leaded SOD59
(TO220AC) package.
PINNING
PIN
DESCRIPTION
1 cathode
2 anode
tab cathode
SOD59 (TO220AC)
tab
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
60 80 100
V_RRM
V_RWM
V_R
I_F(AV)
I_FRM
I_FSM
I_RRM
T_j
T_stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
T_mb ≤ 139 ˚C
- 60 80 100 V
- 60 80 100 V
- 60 80 100 V
Average rectified forward square wave; δ = 0.5; T_mb ≤ 133 ˚C -
10
A
current
Repetitive peak forward
square wave; δ = 0.5; T_mb ≤ 133 ˚C -
20
A
current
Non-repetitive peak forward t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T_j = 125 ˚C prior to
surge; with reapplied V_RRM(max)
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
Operating junction
limited by T_{j max}
-
150
˚C
temperature
Storage temperature
- 65
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
in free air
MIN. TYP. MAX. UNIT
-
-
2 K/W
- 60 - K/W
March 1998
1
Rev 1.200