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PBSS9110Z_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 100 V, 1 A PNP low VCEsat (BISS) transistor | |||
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PBSS9110Z
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 â 11 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110Z.
1.2 Features
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
 High-voltage DC-to-DC conversion
 High-voltage MOSFET gate driving
 High-voltage motor control
 High-voltage power switches (e.g. motors, fans)
 Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO collector-emitter voltage
IC
collector current
ICM
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Conditions
open base
single pulse;
tp ⤠1 ms
IC = â1 A;
IB = â100 mA
Min Typ Max
Unit
-
-
â100 V
-
-
â1
A
-
-
â3
A
[1] -
170 320
mΩ
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