PBSS9110X_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 100 V, 1 A PNP low VCEsat (BISS) transistor

PBSS9110X
100 V, 1 A PNP low V_CEsat (BISS) transistor
Rev. 02 — 22 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
NPN complement: PBSS8110X.
1.2 Features
„ SOT89 package
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High efficiency leading to less heat generation
1.3 Applications
„ Major application segments:
‹ Automotive 42 V power
‹ Telecom infrastructure
‹ Industrial
„ Peripheral driver:
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load driver (e.g. relays, buzzers and motors)
„ DC-to-DC conversion
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
collector current (DC)
-
peak collector current
single pulse;
-
t_p ≤ 1 ms
collector-emitter saturation I_C = −1 A;
[1] _-
resistance
I_B = −100 mA
-
−100 V
-
−1
A
-
−3
A
170 320 mΩ
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.