PBSS8510PA_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 100 V, 5.2 A NPN low VCEsat (BISS) transistor

PBSS8510PA
100 V, 5.2 A NPN low V_CEsat (BISS) transistor
Rev. 1 — 17 May 2010
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS9410PA.
1.2 Features and benefits
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
„ Exposed heat sink for excellent thermal and electrical conductivity
„ Leadless small SMD plastic package with medium power capability
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
R_CEsat
collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = 5.2 A;
I_B = 260 mA
Min Typ Max Unit
-
-
100 V
-
-
5.2 A
-
-
6
A
[1] _-
48
65
mΩ