PBSS8110Y Datasheet, PDF (1/13 Pages) NXP Semiconductors – 100 V, 1 A NPN low VCEsat (BISS) transistor

PBSS8110Y
100 V, 1 A NPN low V_CEsat (BISS) transistor
Rev. 01 — 2 June 2004
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat transistor in a SOT363 (SC-88) plastic package.
1.2 Features
s SOT363 package
s Low collector-emitter saturation voltage V_CEsat
s High collector current capability I_C and I_CM
s High efficiency reduces heat generation.
1.3 Applications
s Major application segments:
x Automotive 42 V power
x Telecom infrastructure
x Industrial.
s Peripheral driver:
x Driver in low supply voltage applications (e.g. lamps and LEDs)
x Inductive load driver (e.g. relays, buzzers and motors).
s DC-to-DC converter.
1.4 Quick reference data
Table 1:
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
-
-
100 V
-
-
1
A
-
-
3
A
-
-
200 mΩ