PBSS8110X Datasheet, PDF (1/15 Pages) NXP Semiconductors – 100 V, 1 A NPN low VCEsat (BISS) transistor

PBSS8110X
100 V, 1 A NPN low V_CEsat (BISS) transistor
Rev. 01 — 11 May 2005
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: PBSS9110X.
1.2 Features
s SOT89 package
s Low collector-emitter saturation voltage V_CEsat
s High collector current capability: I_C and I_CM
s High efficiency leading to less heat generation
1.3 Applications
s Major application segments:
x Automotive 42 V power
x Telecom infrastructure
x Industrial
s Peripheral driver:
x Driver in low supply voltage applications (e.g. lamps and LEDs)
x Inductive load driver (e.g. relays, buzzers and motors)
s DC-to-DC converter
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
V_CEO
I_C
I_CM
collector-emitter voltage
collector current (DC)
peak collector current
R_CEsat collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
t_p ≤ 1 ms
I_C = 1 A;
I_B = 100 mA
Min Typ Max
-
-
100
-
-
1
-
-
3
[1] _-
165 200
Unit
V
A
A
mΩ