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PBSS8110D_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – 100 V, 1 A NPN low VCEsat (BISS) transistor | |||
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PBSS8110D
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 02 â 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat transistor in a plastic SOT457 (SC-74) package.
1.2 Features
 SOT457 package
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High efficiency, leading to less heat generation
1.3 Applications
 Major application segments:
 Automotive 42 V power
 Telecom infrastructure
 Industrial
 DC-to-DC converter
 Peripheral driver
 Driver in low supply voltage applications (e.g. lamps and LEDs)
 Inductive load drivers (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
-
-
100 V
-
-
1
A
-
-
3
A
-
-
200 mΩ
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