PBSS5630PA_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V, 6 A PNP low VCEsat (BISS) transistor

PBSS5630PA
30 V, 6 A PNP low V_CEsat (BISS) transistor
Rev. 01 — 19 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4630PA.
1.2 Features and benefits
 Low collector-emitter saturation voltage V_CEsat
 High collector current capability I_C and I_CM
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
 Exposed heat sink for excellent thermal and electrical conductivity
 Leadless small SMD plastic package with medium power capability
1.3 Applications
 Loadswitch
 Battery-driven devices
 Power management
 Charging circuits
 Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
R_CEsat
collector-emitter
saturation resistance
[1] Pulse test: t_p  300 s;   0.02.
Conditions
open base
single pulse;
t_p  1 ms
I_C = 6 A;
I_B = 300 mA
Min Typ Max Unit
-
-
30 V
-
-
6
A
-
-
7
A
[1] _-
39
58
m