PBSS5440D_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 40 V PNP low VCEsat (BISS) transistor

PBSS5440D
40 V PNP low V_CEsat (BISS) transistor
Rev. 02 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a
SOT457 (SC-74) SMD plastic package.
NPN complement: PBSS4440D.
1.2 Features
„ Ultra low collector-emitter saturation voltage V_CEsat
„ 4 A continuous collector current capability I_C (DC)
„ Up to 15 A peak current
„ Very low collector-emitter saturation resistance
„ High efficiency due to less heat generation
1.3 Applications
„ Power management functions
„ Charging circuits
„ DC-to-DC conversion
„ MOSFET gate driving
„ Power switches (e.g. motors, fans)
„ Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
-
collector current (DC)
[1] _-
-
peak collector current
t = 1 ms or limited by -
-
T_j(max)
collector-emitter saturation I_C = −6 A;
resistance
I_B = −600 mA
[2] _-
55
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL₂O₃, standard footprint.
[2] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Max Unit
−40 V
−4 A
−15 A
75 mΩ