PBSS5350D_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – 50 V, 3 A PNP low VCEsat (BISS) transistor

PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D
1.2 Features and benefits
 Low collector-emitter saturation
voltage V_CEsat
 High current capability
 High efficiency due to less heat
generation
 AEC-Q101 qualified
 Smaller Printed-Circuit Board (PCB)
area than for conventional transistors
1.3 Applications
 Supply line switching circuits
 Battery management applications
 DC-to-DC conversion
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
I_C = -2 A; I_B = -200 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
Min Typ Max Unit
-
-
-50 V
-
-
-3
A
-
-
-5
A
-
120 150 mΩ