PBSS5330PA_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 30 V, 3 A PNP low VCEsat (BISS) transistor

PBSS5330PA
30 V, 3 A PNP low VCEsat (BISS) transistor
7 April 2015
Product data sheet
1. General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an
ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4330PA.
2. Features and benefits
• Low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
• Exposed heat sink for excellent thermal and electrical conductivity
• Leadless small SMD plastic package with medium power capability
3. Applications
• Loadswitch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; t_p ≤ 1 ms
collector-emitter
saturation resistance
I_C = -3 A; I_B = -300 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
Min Typ Max Unit
-
-
-30 V
-
-
-3
A
-
-
-5
A
-
75
107 mΩ
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