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PBSS5240X_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – 40 V, 2 A PNP low VCEsat (BISS) transistor | |||
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PBSS5240X
40 V, 2 A PNP low VCEsat (BISS) transistor
19 October 2012
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:
PBSS4240X.
1.2 Features and benefits
⢠Low collector-emitter saturation voltage VCEsat
⢠High collector current capability IC and ICM
⢠High efficiency due to less heat generation
1.3 Applications
⢠DC-to-DC conversion
⢠Supply line switching
⢠Battery charger
⢠LCD backlighting
⢠Driver in low supply voltage applications (e.g. lamps and LEDs)
⢠Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
ICRM
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
repetitive peak
collector current
IC = -1 A; IB = -100 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02 ; Tamb = 25 °C
tp ⤠20 ms; δ ⤠0.33 ; pulsed
Min Typ Max Unit
-
-
-40 V
-
-
-2
A
-
-
-3
A
-
-
310 mΩ
-
-
-2.5 A
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