PBSS5230T_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – 30 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5230T
30 V, 2 A PNP low VCEsat (BISS) transistor
Rev. 2 — 4 June 2012
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small
Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4230T.
1.2 Features and benefits
 Low collector-emiter saturation voltage
V_CEsat
 High collector current capability:
I_C and I_CM
1.3 Applications
 DC-to-DC conversion
 Supply line switching
 Battery charger
 LCD backlighting
 Higher efficiency leading to less heat
generation
 AEC-Q101 qualified
 Driver in low supply voltage
applications (e.g. lamps and LEDs)
 Inductive load driver (e.g. relays,
buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
single pulse; t_p ≤ 1 ms
I_C = -500 mA; I_B = -50 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
Min Typ Max Unit
-
-
-30 V
-
-
-2
A
-
-
-3
A
-
160 220 Ω