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PBSS5160V_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 1 A PNP low VCEsat (BISS) transistor | |||
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PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 â 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
package.
NPN complement: PBSS4160V.
1.2 Features
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High efficiency leading to less heat generation
 Reduces printed-circuit board area required
 Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
 Major application segments
 Automotive
 Telecom infrastructure
 Industrial
 Power management
 DC-to-DC conversion
 Supply line switching
 Peripheral driver
 Driver in low supply voltage applications (e.g. lamps and LEDs)
 Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
-
[1] -
-
IC = â1 A;
-
IB = â100 mA
-
â60
-
â1
-
â2
220 330
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
A
A
mΩ
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