PBSS5160T_15 Datasheet, PDF (1/11 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

PBSS5160T
60 V, 1 A PNP low V_CEsat (BISS) transistor
Rev. 04 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160T.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability I_C and I_CM
„ High efficiency due to less heat generation
„ Reduces Printed-Circuit Board (PCB) area required
„ Cost-effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
„ Major application segments:
‹ Automotive
‹ Telecom infrastructure
‹ Industrial
„ Power management:
‹ DC-to-DC conversion
‹ Supply line switching
„ Peripheral driver:
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load drivers (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage open base
-
collector current
-
peak collector current
collector-emitter
saturation resistance
t = 1 ms or limited
-
by T_j(max)
I_C = −1 A;
[1] _-
I_B = −100 mA
-
−60 V
-
−1
A
-
−2
A
220 330 mΩ
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.