PBSS5130T_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – 30 V; 1 A PNP low VCEsat (BISS) transistor

PBSS5130T
30 V; 1 A PNP low VCEsat (BISS) transistor
9 July 2013
Product data sheet
1. General description
PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Small SMD plastic package
• Low collector-emitter saturation voltage V_CEsat
• High collector current capability: I_C and I_CM
• Higher efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• DC-to-DC conversion
• Supply line switching
• Battery charger
• LCD backlighting
• Driver in low supply voltage applications (e.g. lamps and LEDs)
4. Quick reference data
Table 1.
Symbol
V_CEO
I_C
I_CM
R_CEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; t_p ≤ 1 ms
collector-emitter
saturation resistance
I_C = -500 mA; I_B = -50 mA; pulsed;
t_p ≤ 300 µs; δ ≤ 0.02 ; T_amb = 25 °C
Min Typ Max Unit
-
-
-30 V
-
-
-1
A
-
-
-3
A
-
-
220 mΩ
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