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PBSS4440D_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 40 V NPN low VCEsat (BISS) transistor | |||
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PBSS4440D
40 V NPN low VCEsat (BISS) transistor
Rev. 02 â 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
SMD plastic package.
PNP complement: PBSS5440D.
1.2 Features
 Ultra low collector-emitter saturation voltage VCEsat
 4 A continuous collector current capability IC (DC)
 Up to 15 A peak current
 Very low collector-emitter saturation resistance
 High efficiency due to less heat generation
1.3 Applications
 Power management functions
 Charging circuits
 DC-to-DC conversion
 MOSFET gate driving
 Power switches (e.g. motors, fans)
 Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ
VCEO
IC
ICM
RCEsat
collector-emitter voltage open base
-
-
collector current (DC)
[1] -
-
peak collector current
t = 1 ms or limited by -
-
Tj(max)
collector-emitter saturation IC = 6 A; IB = 600 mA [2] -
55
resistance
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint.
[2] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Max Unit
40 V
4
A
15 A
75 mΩ
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