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| PBSS4360Z_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 60 V, 3 A NPN low VCEsat (BISS) transistor | |||
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PBSS4360Z
60 V, 3 A NPN low VCEsat (BISS) transistor
26 February 2014
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5360Z.
2. Features and benefits
⢠Low collector-emitter saturation voltage VCEsat
⢠High collector current capability IC and ICM
⢠High energy efficiency due to less heat generation
⢠AEC-Q101 qualified
3. Applications
⢠DC-to-DC conversion
⢠Supply line switching
⢠Battery charger
⢠LCD backlighting
⢠Driver in low supply voltage applications (e.g. lamps and LEDs)
⢠Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ⤠1 ms; single pulse
collector-emitter
saturation resistance
IC = 2 A; IB = 200 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
Min Typ Max Unit
-
-
60
V
-
-
3
A
-
-
6
A
-
-
140 mΩ
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