 English |
|
|
|
|
|
|
|
| PBSS4240Z_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – 40 V, 2 A NPN low VCEsat (BISS) transistor | |||
| |||
|
PBSS4240Z
40 V, 2 A NPN low VCEsat (BISS) transistor
16 October 2014
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS5240Z
2. Features and benefits
⢠Low collector-emitter saturation voltage VCEsat
⢠High collector current capability IC and ICM
⢠High energy efficiency due to less heat generation
⢠AEC-Q101 qualified
3. Applications
⢠DC-to-DC conversion
⢠Supply line switching
⢠Battery charger
⢠LCD backlighting
⢠Driver in low supply voltage applications (e.g. lamps and LEDs)
⢠Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ⤠1 ms; single pulse
collector-emitter
saturation resistance
IC = 1 A; IB = 100 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02; Tamb = 25 °C
Min Typ Max Unit
-
-
40
V
-
-
2
A
-
-
3
A
-
-
275 mΩ
Scan or click this QR code to view the latest information for this product
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese