PBSS4220V_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – 20 V, 2 A NPN low VCEsat (BISS) transistor

PBSS4220V
20 V, 2 A NPN low V_CEsat (BISS) transistor
Rev. 02 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
PNP complement: PBSS5220V.
1.2 Features
„ Low collector-emitter saturation voltage V_CEsat
„ High collector current capability: I_C and I_CM
„ High collector current gain (h_FE) at high I_C
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ DC-to-DC conversion
„ MOSFET gate driving
„ Motor control
„ Charging circuits
„ Low power switches (e.g. motors, fans)
„ Portable applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
t_p ≤ 300 μs
I_C = 1 A;
I_B = 100 mA
Min Typ Max
Unit
-
-
20
V
-
-
2
A
-
-
4
A
[1] _-
140 175
mΩ