PBSS4220V Datasheet, PDF (1/13 Pages) NXP Semiconductors – 20 V, 2 A NPN low VCEsat (BISS) transistor

PBSS4220V
20 V, 2 A NPN low V_CEsat (BISS) transistor
Rev. 01 — 6 February 2006
Product data sheet
1. Product profile
1.1 General description
NPN low V_CEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface
Mounted Device (SMD) plastic package.
PNP complement: PBSS5220V.
1.2 Features
s Low collector-emitter saturation voltage V_CEsat
s High collector current capability: I_C and I_CM
s High collector current gain (h_FE) at high I_C
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Low power switches (e.g. motors, fans)
s Portable applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
t_p ≤ 300 µs
I_C = 1 A;
I_B = 100 mA
Min Typ Max
-
-
20
-
-
2
-
-
4
[1] _-
140 175
Unit
V
A
A
mΩ